Title :
Prediction of transient induced by neutron/proton in CMOS combinational logic cells
Author :
Hubert, G. ; Bougerol, A. ; Miller, F. ; Buard, N. ; Anghel, L. ; Carriere, T. ; Wrobel, F. ; Gaillard, R.
Author_Institution :
EADS, Corporate Res. Center
Abstract :
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented
Keywords :
CMOS logic circuits; Monte Carlo methods; combinational circuits; neutrons; protons; CMOS combinational logic cells; CMOS combinational logic gates; Monte-Carlo methodology; neutron; proton; secondary ion effects; single-event transients; transient effect; Aerospace electronics; CMOS logic circuits; Databases; Error analysis; Neutrons; Protons; Pulse circuits; Silicon; Single event upset; Transient analysis;
Conference_Titel :
On-Line Testing Symposium, 2006. IOLTS 2006. 12th IEEE International
Conference_Location :
Lake Como
Print_ISBN :
0-7695-2620-9
DOI :
10.1109/IOLTS.2006.51
