Novel light emitting diodes in silicon

Summary form only given. We describe a new approach dislocation engineering using crucially just conventional ULSI technology, to make efficient light emitting diodes (LEDs) in silicon operating at room temperature. Because of its indirect bandgap silicon is fundamentally a poor emitter of light. A way of enhancing the radiative efficiency would be to prevent the carrier diffusion. The method described here is to use the controlled introduction of dislocation loops by conventional ion implantation and thermal processing.