Abstract :
Summary form only given. With ever-shrinking process technology, there is significant concern about the effects of process variability on design margins, yield, and performance. In addition, reliability is a major concern with new technology, not only through classic means such as latent defects and NBTI, but also by new issues brought on by variability, small feature sizes, and power-saving features such as dynamic supply voltage scaling. This paper shows how process scaling will affect reliability and how this interacts with ECC and redundancy features
Keywords :
SRAM chips; embedded systems; integrated circuit reliability; integrated circuit yield; 90 nm; ECC; design margins; dynamic supply voltage scaling; embedded SRAM; performance; power-saving features; redundancy features; reliability issues; shrinking process technology; small feature sizes; variability; yield; Dynamic voltage scaling; Niobium compounds; Process design; Random access memory; Redundancy; Testing; Titanium compounds; USA Councils;
