• DocumentCode
    2263181
  • Title

    Multi-wavelength infrared detection realized with two distinct superlattices, separated by a blocking barrier

  • Author

    Chen, C.C. ; Chen, H.C. ; Hsieh, W.H. ; Kuan, C.H. ; Lin, S.D. ; Lee, C.P.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2002
  • fDate
    24-24 May 2002
  • Abstract
    Summary form only given. A detector with two distinct superlattices separated by a blocking barrier was investigated for multi-wavelength infrared detection. We show the band structure of our detector. It contains sequentially a 500 nm bottom contact layer, a 14-period bottom superlattice, a blocking barrier, another 14-period top superlattice, and a 400 nm top contact layer. Each period of the bottom and top superlattices is respectively composed of 6 nm GaAs well and 4 nm Al/sub 0.27/Ga/sub 0.73/As barrier.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; semiconductor superlattices; 14-period bottom superlattice; 14-period top superlattice; Al/sub 0.27/Ga/sub 0.73/As; Al/sub 0.27/Ga/sub 0.73/As barrier; GaAs; GaAs well; blocking barrier; bottom contact layer; multi-wavelength infrared detection; superlattices; top contact layer; Gallium arsenide; Infrared detectors; Optical fiber cables; Optical fiber communication; Oxidation; Photodetectors; Substrates; Superlattices; Voltage; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-706-7
  • Type

    conf

  • DOI
    10.1109/CLEO.2002.1033530
  • Filename
    1033530