Title :
A bi-directional optical link using a stacked thin film emitter and detector
Author :
Geddis, D.L. ; Jokerst, N.M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Summary from only given. We demonstrate a fabrication method for stacking thin film emitters and detectors directly on top of one another to realize a bidirectional, co-located emitter/detector pair for bi-directional optical communication. To our knowledge, this is the first demonstration of the stacking of an emitter/detector pair of active components that are independently grown and optimized before integration. To fabricate the bi-directional co-located optical link, a thin film GaAs-based inverted metal-semiconductor- metal (I-MSM) photodetector (PD) and a thin film GaAs-based light emitting diode (LED) have been independently grown, fabricated into devices, and bonded onto a SiO/sub 2/ coated host substrate.
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; light emitting diodes; metal-semiconductor-metal structures; optical fabrication; optical receivers; optical transmitters; photodetectors; GaAs; LED; SiO/sub 2/; active components; bidirectional co-located emitter/detector pair; bonded; coated host substrate; fabrication method; independently grown; stacking thin film detectors; stacking thin film emitters; thin film GaAs-based inverted metal-semiconductor-metal photodetector; thin film GaAs-based light emitting diode; Bidirectional control; Bonding; Detectors; Light emitting diodes; Optical device fabrication; Optical fiber communication; Optical films; Photodetectors; Stacking; Thin film devices;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033531