• DocumentCode
    2263222
  • Title

    Low power LDO with fast load transient response based on quick response circuit

  • Author

    Heng, Socheat ; Tung, Weichun ; Pham, Cong-Kha

  • Author_Institution
    Univ. of Electro-Commun., Chofu, Japan
  • fYear
    2009
  • fDate
    24-27 May 2009
  • Firstpage
    2529
  • Lastpage
    2532
  • Abstract
    In this work, we propose a design technique of low power fully CMOS low-dropout voltage regulator (LDO) based on quick response (QR) circuit to improve the load transient response. Implemented in 0.18 mum CMOS technology, the LDO with proposed QR circuit can achieve a fast load transient responses with less transient overshoot or undershoot when driving a large load current. For 1 muF decoupling capacitor and 0.1 mA-150 mA load current change, the output undershoot and overshoot are 196 mV and 172 mV while the settling time is approximately 60 mus and 65 mus respectively . The proposed circuit dissipates a very low static power, with only 8.5 muA for light load and 35 muA for heavy load for output voltage VOUT = 1.2 V and input voltage VDD = VOUT + 1.0 V . This includes the reference circuit, the over current protection circuit as well as the feedback network.
  • Keywords
    CMOS integrated circuits; low-power electronics; transient response; voltage regulators; capacitance 1 muF; current 0.1 mA to 150 mA; current 35 muA; current 8.5 muA; decoupling capacitor; fast load transient response; feedback network; load current; low power fully CMOS low-dropout voltage regulator; overcurrent protection circuit; quick response circuit; reference circuit; size 0.18 mum; very low static power; voltage 1 V; voltage 1.2 V; voltage 172 mV; voltage 196 mV; CMOS technology; Capacitance; Capacitors; Energy consumption; MOSFET circuits; Personal digital assistants; Power MOSFET; Regulators; Transient response; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3827-3
  • Electronic_ISBN
    978-1-4244-3828-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2009.5118316
  • Filename
    5118316