• DocumentCode
    2263305
  • Title

    Subthreshold deep submicron performance investigation of CMOS and DTCMOS biasing schemes for reconfigurable computing

  • Author

    Kureshi, A.K. ; Alam, Naushad ; Hasan, Mohd ; Arslan, Tughrul

  • Author_Institution
    Dept. of Electron. Eng., AMU, Aligarh, India
  • fYear
    2009
  • fDate
    24-27 May 2009
  • Firstpage
    2545
  • Lastpage
    2548
  • Abstract
    This paper investigates subthreshold CMOS logic for ultra low power applications on next generation reconfigurable devices. The performance characteristics of key digital building blocks such as arithmetic units, multiplexers and look-up-tables have been analyzed in terms of speed, power dissipation and power delay product using Berkeley predictive technology models at 22 nm technology node for both the conventional subthreshold CMOS (CMOS) and the dynamic threshold subthreshold CMOS (DTCMOS). Simulation results show that DTCMOS has lower PDP and sensitivities to process variations compared to CMOS for the digital blocks. Moreover, the PDP of blocks can be further improved by using longer channel lengths.
  • Keywords
    CMOS logic circuits; low-power electronics; Berkeley predictive technology model; CMOS biasing scheme; DTCMOS biasing scheme; digital block; next generation reconfigurable devices; power delay product; power dissipation; reconfigurable computing; size 22 nm; subthreshold deep submicron performance; ultra low power application; CMOS logic circuits; CMOS technology; Delay; Digital arithmetic; Logic devices; Multiplexing; Performance analysis; Power dissipation; Reconfigurable logic; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3827-3
  • Electronic_ISBN
    978-1-4244-3828-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2009.5118320
  • Filename
    5118320