DocumentCode
2263305
Title
Subthreshold deep submicron performance investigation of CMOS and DTCMOS biasing schemes for reconfigurable computing
Author
Kureshi, A.K. ; Alam, Naushad ; Hasan, Mohd ; Arslan, Tughrul
Author_Institution
Dept. of Electron. Eng., AMU, Aligarh, India
fYear
2009
fDate
24-27 May 2009
Firstpage
2545
Lastpage
2548
Abstract
This paper investigates subthreshold CMOS logic for ultra low power applications on next generation reconfigurable devices. The performance characteristics of key digital building blocks such as arithmetic units, multiplexers and look-up-tables have been analyzed in terms of speed, power dissipation and power delay product using Berkeley predictive technology models at 22 nm technology node for both the conventional subthreshold CMOS (CMOS) and the dynamic threshold subthreshold CMOS (DTCMOS). Simulation results show that DTCMOS has lower PDP and sensitivities to process variations compared to CMOS for the digital blocks. Moreover, the PDP of blocks can be further improved by using longer channel lengths.
Keywords
CMOS logic circuits; low-power electronics; Berkeley predictive technology model; CMOS biasing scheme; DTCMOS biasing scheme; digital block; next generation reconfigurable devices; power delay product; power dissipation; reconfigurable computing; size 22 nm; subthreshold deep submicron performance; ultra low power application; CMOS logic circuits; CMOS technology; Delay; Digital arithmetic; Logic devices; Multiplexing; Performance analysis; Power dissipation; Reconfigurable logic; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3827-3
Electronic_ISBN
978-1-4244-3828-0
Type
conf
DOI
10.1109/ISCAS.2009.5118320
Filename
5118320
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