DocumentCode
2263449
Title
A principle of calculation dynamic and static power losses with hard-switching IGBT
Author
Kharitonov, Sergey A. ; Petrov, Maxim A. ; Korobkov, Dmitry V. ; Maslov, M.A. ; Zhoraev, Timur Y.
Author_Institution
Novosibirsk State Tech. Univ., Russia
fYear
2005
fDate
1-5 July 2005
Firstpage
147
Lastpage
149
Abstract
This paper is introducing the method of calculating a power losses in hard switching IGBT with free-wheeling diode by sine load current. This principle is given possibilities to calculate losses by datasheet.
Keywords
insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; calculation dynamic principle; free-wheeling diode; hard-switching IGBT; loss calculation; sine load current; static power loss; Conductors; Diodes; Insulated gate bipolar transistors; Power dissipation; Power system dynamics; Pulse modulation; Pulse width modulation inverters; Switches; Temperature dependence; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
ISSN
1815-3712
Print_ISBN
5-7782-0491-4
Type
conf
DOI
10.1109/SIBEDM.2005.195608
Filename
1523213
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