DocumentCode :
2263449
Title :
A principle of calculation dynamic and static power losses with hard-switching IGBT
Author :
Kharitonov, Sergey A. ; Petrov, Maxim A. ; Korobkov, Dmitry V. ; Maslov, M.A. ; Zhoraev, Timur Y.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2005
fDate :
1-5 July 2005
Firstpage :
147
Lastpage :
149
Abstract :
This paper is introducing the method of calculating a power losses in hard switching IGBT with free-wheeling diode by sine load current. This principle is given possibilities to calculate losses by datasheet.
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; calculation dynamic principle; free-wheeling diode; hard-switching IGBT; loss calculation; sine load current; static power loss; Conductors; Diodes; Insulated gate bipolar transistors; Power dissipation; Power system dynamics; Pulse modulation; Pulse width modulation inverters; Switches; Temperature dependence; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
ISSN :
1815-3712
Print_ISBN :
5-7782-0491-4
Type :
conf
DOI :
10.1109/SIBEDM.2005.195608
Filename :
1523213
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2263449
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