Title :
All-semiconductor plasmonic system in mid infrared range
Author :
Li, D. ; Ning, C.Z.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
The feasibility of an all-semiconductor plasmonic structure is studied using highly doped InAs for Mid infrared (MIR) wavelength range. We proposed an all-semiconductor active plasmonic system on-a-chip with integrated plasmonic source, waveguide, and detector.
Keywords :
III-V semiconductors; gallium compounds; heavily doped semiconductors; indium compounds; infrared spectra; plasmonics; InAs-GaSb; all-semiconductor active plasmonic system on-a-chip; all-semiconductor plasmonic structure; detector; highly doped InAs; midinfrared wavelength range; plasmonic source; waveguide; Detectors; Dielectric constant; Materials; Metals; Optical waveguides; Plasmons; Semiconductor waveguides;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
