DocumentCode
2263829
Title
Measurements of /spl alpha/-factor in 2-2.5 /spl mu/m type-I In(Al)GaAsSb/GaSb broadened waveguide lasers
Author
Shterengas, L. ; Gourevich, A. ; Belenky, G. ; Kim, J.G. ; Martinelli, R.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
fYear
2002
fDate
24-24 May 2002
Firstpage
157
Abstract
Summary from only given. The values of the /spl alpha/-factor for 2-2.5 /spl mu/m InGa(Al)AsSb QW lasers at threshold were in the range 3-4 and are in agreement with values obtained from above-threshold near-field measurements.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; /spl alpha/-factor measurement; 2 to 2.5 micron; In(Al)GaAsSb-GaSb; InGaAlAsSb QW lasers; above-threshold near-field measurements; quantum well lasers; type-I In(AI)GaAsSb/GaSb broadened waveguide QW lasers; Current measurement; Gas lasers; Laser beams; Laser modes; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; US Department of Transportation; Waveguide lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1033557
Filename
1033557
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