Title :
Low current operation of GaAs/AlGaAs based quantum cascade lasers
Author :
Page, H. ; De Rossi, A. ; Collot, P. ; Ortiz, V. ; Sirtori, C.
Author_Institution :
Thales Res. & Technol., Orsay, France
Abstract :
Summary form only given. Although the threshold current density of quantum cascade lasers is continuously decreasing, the true current at threshold remains large. This is mainly imposed by the long emission wavelengths of these devices which require larger ridge sizes. Therefore a considerable reduction of the current could come from a decrease of the device dimensions. The major obstacles to this strategy are the increased scattering losses of the optical mode with the edges of the laser ridge and the higher mirror losses for shorter cavity lengths. To overcome the problem of the scattering losses we have developed a processing technology based on ion-implantation, which separates the electrical from the optical confinement.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; ion implantation; light scattering; optical losses; quantum cascade lasers; ridge waveguides; waveguide lasers; GaAs-AlGaAs; GaAs/AlGaAs based quantum cascade lasers; cavity lengths; device dimensions; electrical confinement; ion-implantation; laser ridge; long emission wavelengths; low current operation; mirror losses; optical confinement; optical mode; processing technology; quantum cascade lasers; ridge sizes; ridge waveguide lasers; scattering losses; threshold current density; Gallium arsenide; Laser modes; Mirrors; Optical losses; Optical pumping; Optical saturation; Optical scattering; Pump lasers; Quantum cascade lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033559