DocumentCode
2263945
Title
Trend in DRAM soft errors
Author
Schindlbeck, Günter
Author_Institution
Infineon Technol., Munich
fYear
0
fDate
0-0 0
Abstract
Summary form only given. The quality of electrical tests during irradiation of components has also improved a lot. Test patterns have been modified and characteristics of recent DRAMs have had to be taken into account. We can also observe a trend in the results of soft error tests. In the beginning, we mostly got single-bit events and did not ask for more. The trend is now moving toward a complete listing of error rates for any number of fail-bits per event in combination with the fail-bit addresses. Soft errors with fail-counts up to several thousand per event have to be handled by the tests
Keywords
DRAM chips; automatic test pattern generation; error statistics; DRAM soft errors; component irradiation; electrical test quality; fail-counts; single-bit events; soft error tests; test patterns; Error analysis; Life estimation; Neutrons; Random access memory; Roads; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
On-Line Testing Symposium, 2006. IOLTS 2006. 12th IEEE International
Conference_Location
Lake Como
Print_ISBN
0-7695-2620-9
Type
conf
DOI
10.1109/IOLTS.2006.63
Filename
1655560
Link To Document