DocumentCode
2264084
Title
GaAs:Cr X-ray pixel detectors
Author
Zarubin, Andrey ; Mokeev, Dmitry ; Novikov, Vladimir ; Tolbanov, Oleg ; Tyazhev, Anton
Author_Institution
Tomsk State Univ., Tomsk, Russia
fYear
2011
fDate
15-16 Sept. 2011
Firstpage
258
Lastpage
260
Abstract
Results of investigation of quantum count mode gallium arsenide pixel detectors are demonstrated. It was shown that at room temperature energy resolution of GaAs detector similar to silicon ones. But detection quantum efficiency (DQE) of 30 keV gamma-quanta of GaAs detector exceeds DQE of Si detector more then order of magnitude.
Keywords
III-V semiconductors; X-ray detection; chromium; gallium arsenide; image sensors; DQE; GaAs:Cr; X-ray pixel detector; detection quantum efficiency; electron volt energy 30 keV; energy resolution; gamma quanta; quantum count mode gallium arsenide pixel detector; silicon detector; temperature 293 K to 298 K; Anodes; Cathodes; Detectors; Electric fields; Energy resolution; Gallium arsenide; Silicon; compensated with chromium; detection quantum efficiency; gallium arsenide; gamma-ray; pixel detector; x-ray;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location
Krasnoyarsk
Print_ISBN
978-1-4577-1069-8
Type
conf
DOI
10.1109/SIBCON.2011.6072649
Filename
6072649
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