DocumentCode :
2264211
Title :
Properties of the Ga2O3 films obtained by anodization
Author :
Petrova, Y.S. ; Kalygina, V.M. ; Yaskevich, T.M.
Author_Institution :
Tomsk State Univ., Tomsk, Russia
fYear :
2011
fDate :
15-16 Sept. 2011
Firstpage :
270
Lastpage :
273
Abstract :
The effect of oxygen plasma and thermal annealing on electrical and dielectric properties of anodic films Ga2O3 wasinvestigated.
Keywords :
annealing; anodisation; dielectric thin films; electric breakdown; electrical conductivity; gallium compounds; plasma materials processing; semiconductor materials; semiconductor thin films; surface morphology; Ga2O3; anodic films; anodization; dielectric breakdown; dielectric properties; electrical conductivity; electrical properties; n- type semiconducting materials; oxygen plasma; surface morphology; thermal annealing; Annealing; Capacitance-voltage characteristics; Conductivity; Films; Nickel; Plasmas; Surface morphology; Anodic film Ga2O3; an oxygen plasma; gallium arsenide; thermal annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4577-1069-8
Type :
conf
DOI :
10.1109/SIBCON.2011.6072653
Filename :
6072653
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2264211
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