Energy and ultra-pure water consumption saving by the room temperature cleaning

Author

Matsuo, Hiroshi ; Higuchi, Tatsuro ; Miyazaki, Koji

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

6

Lastpage

9

Abstract

Energy-saving effect of a room temperature wet cleaning method using ozonated ultra-pure water is estimated in semiconductor manufacturing process. We can save 68% of electric energy and 33% of ultra-pure water consumption for each cleaning process in comparison with a conventional RCA cleaning. Total energy-saving effect using the room temperature cleaning method in front-end processes is 44% of electric and UPW generation energy. Electrical characteristics of gate oxide which is precleaned by using the room temperature wet cleaning method are equivalent for those by the conventional RCA cleaning.

Keywords

cleaning; electronics industry; power consumption; semiconductor device manufacture; water conservation; water treatment; 293 to 298 K; H₂O; UPW generation energy; electric energy; electrical properties; energy-saving; gate oxide; room temperature; semiconductor manufacturing; ultra pure water consumption; wet cleaning; Chemicals; Cities and towns; Cleaning; Electric variables; Electric variables measurement; Energy consumption; Manufacturing processes; Power measurement; Temperature; Ultrasonic variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243219

Filename

1243219