Title :
Improvement in reading precision of micro-ID engraved on wafer
Author :
Uchida, I. ; Suzuki, Nobuhiro ; Arikado, T. ; Saitoh, Youichi ; Fujimoto, Kenji ; Nakajima, Kensuke
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
A micro-ID composed of small engraved on a wafer bevel is superior to conventional marks such as SEMI-T7 in the enhanced chip gross and the reduced particle addition. In this work, micro-ID technology has been improved to enhance the reading precision. We introduce (i) an SiOC film covering the wafer bevel to prevent the dots from erosion in wafer processes, and (ii) a bevel polishing in multilevel interconnection process to cover the bevel smoothly. These two countermeasures result in 100% recognition through the CMOS process with a double level Cu interconnection.
Keywords :
CMOS integrated circuits; chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit manufacture; metallic thin films; silicon compounds; CMOS process; Cu; SEMI-T7; SiOC; SiOC film; double level Cu interconnection; enhanced chip; erosion; micro-ID engraved; multilevel interconnection process; reading precision; wafer bevel; wafer processes; CMOS process; Chemical lasers; Chemical technology; Lead compounds; Lighting; Power lasers; Quality control; Semiconductor device manufacture; Semiconductor films; Shape;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243227
