DocumentCode
2264517
Title
Passgate resistance estimation based on the compact EKV model and effective mobility
Author
Degnan, Brian P. ; Wunderlich, Richard B. ; Hasler, Paul E.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2009
fDate
24-27 May 2009
Firstpage
2765
Lastpage
2768
Abstract
A method to approximate nFET passgate resistance using the compact EKV model is presented. The model picks a mobility that has a greater effect on channel current than higher-order MOS effects in order to approximate the worst-case current over a drain-source voltage range. The model is compared to data taken from an IC that was fabricated in a 0.5 mum, scalable CMOS process available through MOSIS.
Keywords
CMOS integrated circuits; field effect transistors; CMOS process; compact EKV model; drain-source voltage range; higher-order MOS effect; nFET passgate resistance; passgate resistance estimation; size 0.5 mum; CMOS integrated circuits; CMOS process; Electric resistance; Field programmable analog arrays; Field programmable gate arrays; Integrated circuit modeling; Semiconductor device modeling; Switches; Symmetric matrices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3827-3
Electronic_ISBN
978-1-4244-3828-0
Type
conf
DOI
10.1109/ISCAS.2009.5118375
Filename
5118375
Link To Document