Title :
Continuous wave operation of quantum cascade lasers at room temperature
Author :
Beck, M. ; Hofstetter, D. ; Aellen, Th. ; Faist, J. ; Gini, E.
Author_Institution :
Inst. de Phys., Neuchatel Univ., Switzerland
Abstract :
Summary from only given. We present buried heterostructure QC lasers with a four quantum well (QW) active region designed for emission at 9.1 /spl mu/m with an improved waveguiding scheme and better heat dissipation for high temperature CW operation. The four quantum well design makes use of short lifetime of the lower lasing state and the good injection efficiency into the upper lasing state. The laser structure is grown by molecular beam epitaxy (MBE) using ternary InGaAs and InAlAs alloys lattice matched to an n-doped InP substrate. The QC laser active material consists of 35 periods, each comprising a partially n-doped injector region and the undoped four QW active region, embedded in an optical waveguide.
Keywords :
infrared sources; laser transitions; molecular beam epitaxial growth; quantum cascade lasers; substrates; waveguide lasers; 9.1 micron; InAlAs; InGaAs; InGaAs layer; InP; InP substrate; MBE; MOVPE; QC laser active material; buried heterostructure QC lasers; cladding layer; four quantum well active region; high temperature CW operation; lattice matched; metal-organic chemical vapour phase epitaxy; molecular beam epitaxy; n-doped InP substrate; optical waveguide; short lifetime; upper lasing state; waveguiding scheme; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical design; Quantum cascade lasers; Quantum well lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033590