Title :
Quantum cascade active regions based on InAs/AlSb/GaSb
Author :
Becker, C. ; Garcia, M. ; Marcadet, X. ; Prevot, I. ; Sirtori, C.
Author_Institution :
Thales Res. & Technol., Orsay, France
Abstract :
Summary form only given. To obtain a laser, cladding layers have to be added to the structure, in order to maximize the overlap of the emitted radiation with the active region. To this end, we use a 20 /spl Aring//20 /spl Aring/ InAs/AlSb superlattice where the InAs layers are n doped with Si n = 5 X 10/sup 18/ cm/sup -3/. This type of cladding has already been used in interband cascade lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum cascade lasers; semiconductor superlattices; waveguide lasers; InAs layers; InAs-AlSb; InAs-AlSb-GaSb; InAs/AlSb superlattice; InAs/AlSb/GaSb; active region; emitted radiation; interband cascade lasers; n doped; quantum cascade active regions; Current density; Current measurement; Density measurement; Intrusion detection; Molecular beam epitaxial growth; Optical polarization; Optical refraction; Power measurement; Quantum cascade lasers; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033594
