Title :
Poly silicon deposition process improvement on 300 mm wafers (PC23)
Author :
Lin, Bo ; Patel, Nital S. ; Boone, John
Author_Institution :
Texas Instrum., Dallas, TX, USA
fDate :
30 Sept.-2 Oct. 2003
Abstract :
This paper presents the application of advanced process control (APC) to tighten the distribution of LPCVD deposited polysilicon thickness during device manufacturing on 300mm wafers. Using APC, a 40% reduction in thickness variation is achieved. This improvement is possible by 1) automatically feeding back deposition time adjustments, 2) introduction of load size based compensation and 3) optimizing the response factor in the feed back loop.
Keywords :
chemical vapour deposition; elemental semiconductors; integrated circuit manufacture; process control; semiconductor device manufacture; semiconductor growth; semiconductor thin films; silicon; 300 mm; LPCVD deposited polysilicon; Si; advanced process control; automatically feeding back deposition; feed back loop; poly silicon deposition; Costs; Instruments; Manufacturing processes; Metrology; Monitoring; Process control; Production; Silicon; Size control; Thickness measurement;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243245
