Fault detection and classification of plasma CVD tool

Author

Wu, H.C. ; Chang, C.T. ; Chen, Bo-Hao ; Lee, C.Y. ; Chang, C.J. ; Zhou, M.S. ; Liang, M.S.

Author_Institution

Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

123

Lastpage

125

Abstract

A fault detection and classification (FDC) study by means of principle component analysis (PCA) is conducted on a high density plasma (HDP) chemical vapor deposition (CVD) tool. The design of experiment (DOE) of gas flow and RF power effects is introduced to study the feasibility of PCA for FDC as well as to investigate the correlation of tool parameters. In this study, the first wafer effect of HDP CVD tool is identified and attributed to thermal system variation. It is shown that the PCA model is sensitive to detect (+/-)5% variation of tool parameters. It is also found that the fault space vector method might provide an approach for fault classification.

Keywords

design of experiments; plasma CVD; principal component analysis; semiconductor device manufacture; semiconductor process modelling; tools; RF power effects; design of experiment; fault classification; fault detection; gas flow; high density plasma chemical vapor deposition tool; plasma CVD tool; principle component analysis; thermal system; tool parameters; wafer effect; Chemical analysis; Chemical vapor deposition; Fault detection; Fluid flow; Plasma chemistry; Plasma density; Principal component analysis; Radio frequency; Radiofrequency identification; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243246

Filename

1243246