DocumentCode
2264859
Title
Very low threshold photonic band edge lasers from free-standing triangular photonic crystal slabs
Author
Han-Youl Ryu ; Soon-Hong Kwon ; Yong-Jae Lee ; Yong-Hee Lee ; Jeong-Soo Kim
Author_Institution
Dept. of Phys., KAIST, South Korea
fYear
2002
fDate
24-24 May 2002
Firstpage
190
Abstract
Summary form only given. We report photonic band edge lasers formed in a free-standing photonic crystal stab. The effective refractive index variation in the triangular array of air hole patterns is larger than . Therefore, large enhancement of photon density of states at band edges is expected. Seven pairs of InGaAsP quantum wells are used as active material.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photonic crystals; quantum well lasers; refractive index; InGaAsP; InGaAsP quantum well active material; air hole patterns; band edges; effective refractive index variation; free-standing photonic crystal stab; photon density of states; photonic band edge lasers; triangular array; Finite difference methods; Laser modes; Laser theory; Lattices; Photonic crystals; Pump lasers; Quantum well lasers; Semiconductor lasers; Slabs; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1033605
Filename
1033605
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