Title :
BiCMOS high-performance ICs: From DC to mm-wave
Author :
Smolders, A.B. ; Gul, H. ; Heijden, E. V d ; Gamand, P. ; Geurts, M.
Author_Institution :
NXP Semicond., Nijmegen, Netherlands
Abstract :
Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; wide band gap semiconductors; BiCMOS technologies; SiGe; high-performance IC; integrated receiver; mm-wave integrated circuit; mobile applications; transmitter IC; BiCMOS integrated circuits; CMOS technology; GSM; Germanium silicon alloys; Global Positioning System; Impedance; Integrated circuit technology; Isolation technology; Jamming; Silicon germanium; RF circuits; Silicon bipolar/BiCMOS process technology; microwave circuits; mm-wave circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314130
