BiCMOS high-performance ICs: From DC to mm-wave

Author

Smolders, A.B. ; Gul, H. ; Heijden, E. V d ; Gamand, P. ; Geurts, M.

Author_Institution

NXP Semicond., Nijmegen, Netherlands

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

115

Lastpage

122

Abstract

Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; wide band gap semiconductors; BiCMOS technologies; SiGe; high-performance IC; integrated receiver; mm-wave integrated circuit; mobile applications; transmitter IC; BiCMOS integrated circuits; CMOS technology; GSM; Germanium silicon alloys; Global Positioning System; Impedance; Integrated circuit technology; Isolation technology; Jamming; Silicon germanium; RF circuits; Silicon bipolar/BiCMOS process technology; microwave circuits; mm-wave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314130

Filename

5314130