Development of flash lamp annealing system for 300 mm wafer

Author

Yamashita, Katsumi ; Nishimori, H. ; Yoshioka, Michifumi ; Kusuda, T. ; Arikado, T. ; Okumura, Katsuhiro

Author_Institution

Semicond. Leading Edge Technol. Inc., Tsukuba, Japan

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

153

Lastpage

156

Abstract

A flash lamp annealing system has been developed for processing ultra shallow junctions in a 300 mm. The damaged layer, formed during ion implantation, absorbs the light radiation from the flash lamp, transforming it into heat energy. The carrier concentration is the highest near the ion implant mean range. The optimization of the irradiation energy and time has enabled the processing of a uniform sheet resistance distribution over a 300 mm wafer. In addition, a uniform junction depth, Xj, of 16 nm was obtained over the entire area of a 300 mm wafer.

Keywords

incoherent light annealing; integrated circuit manufacture; ion implantation; semiconductor junctions; 16 nm; 300 mm; carrier concentration; flash lamp annealing system; heat energy; ion implantation; irradiation energy; light radiation; shallow junctions; sheet resistance; wafer; Annealing; Boron; Capacitors; Energy measurement; Implants; Lamps; Resistance heating; Space vector pulse width modulation; Temperature; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243253

Filename

1243253