Title :
Development of flash lamp annealing system for 300 mm wafer
Author :
Yamashita, Katsumi ; Nishimori, H. ; Yoshioka, Michifumi ; Kusuda, T. ; Arikado, T. ; Okumura, Katsuhiro
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
A flash lamp annealing system has been developed for processing ultra shallow junctions in a 300 mm. The damaged layer, formed during ion implantation, absorbs the light radiation from the flash lamp, transforming it into heat energy. The carrier concentration is the highest near the ion implant mean range. The optimization of the irradiation energy and time has enabled the processing of a uniform sheet resistance distribution over a 300 mm wafer. In addition, a uniform junction depth, Xj, of 16 nm was obtained over the entire area of a 300 mm wafer.
Keywords :
incoherent light annealing; integrated circuit manufacture; ion implantation; semiconductor junctions; 16 nm; 300 mm; carrier concentration; flash lamp annealing system; heat energy; ion implantation; irradiation energy; light radiation; shallow junctions; sheet resistance; wafer; Annealing; Boron; Capacitors; Energy measurement; Implants; Lamps; Resistance heating; Space vector pulse width modulation; Temperature; Voltage control;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243253
