Title :
The control of channeling phenomenon
Author :
Shibata, Takuma ; Hashimoto, Hiroya ; Hirakawa, Tsubasa ; Tonari, Kazuhiko
Author_Institution :
HALCA project, Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
A dependence of a depth profile on a tilt and twist angle was investigated with a resolution of 0.05 deg. using a stencil mask ion implanter which has less than 0.1 deg. parallelism of ion beam. Our experimental results show channeling phenomenon can be controlled using with highly controlled parallel ion beam. It means that if we control the tilt angle with in the resolution of less than 0.1 deg., we can neglect the fluctuation caused by channeling phenomenon.
Keywords :
channelling; energy loss of particles; ion implantation; secondary ion mass spectra; Si; channeling; parallel ion beam; stencil mask ion implanter; tilt angle; twist angle; Acceleration; Boron; Fluctuations; Ion beams; Ion implantation; Manufacturing processes; Monitoring; Reproducibility of results; Saturation magnetization; Shadow mapping;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243255
