Title :
Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing
Author :
Ito, Takao ; Suguro, Kyoichi
fDate :
30 Sept.-2 Oct. 2003
Abstract :
The impact of flash lamp annealing (FLA) technology realizing the minimum diffusion with low sheet resistivity is investigated based on MOSFET fabrication and computer simulations. It was found that the productivity can be improved, since FLA enables to employ higher acceleration energy ion implantation and higher through-put, and that MOSFET performance can be improved with its deviation being suppressed.
Keywords :
MOSFET; incoherent light annealing; semiconductor device manufacture; MOSFET fabrication; acceleration energy ion implantation; diffusion; flash lamp annealing; sheet resistivity; Acceleration; Conductivity; Fabrication; Indium tin oxide; Ion implantation; Lamps; MOSFETs; Productivity; Simulated annealing; Temperature;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243258
