Title :
Cascaded exciton relaxation resonantly enhanced by LO phonons in vertically-stacked InAs quantum dots on InP
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Ooi, Boon S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We have evidenced the relaxation of excitons cascading down from the highest energy state to the ground level in vertically-stacked InAs quantum dots grown on an InP substrate, which is resonantly enhanced by LO phonons.
Keywords :
III-V semiconductors; excitons; indium compounds; phonons; photoluminescence; wide band gap semiconductors; InAs; InP; carrier recombination dynamics; cascaded exciton relaxation; energy state; ground level; longitudinal optical phonons; time-resolved differential photoluminescence spectra; vertically-stacked quantum dots; Excitons; Indium phosphide; Laser mode locking; Phonons; Pulsed laser deposition; Quantum dots; Radiative recombination; Resonance; Substrates; Temperature; (160.6000) Semiconductor materials; (250.5230) Photoluminescence; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
