DocumentCode
2265116
Title
Cascaded exciton relaxation resonantly enhanced by LO phonons in vertically-stacked InAs quantum dots on InP
Author
Mu, Xiaodong ; Ding, Yujie J. ; Ooi, Boon S.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We have evidenced the relaxation of excitons cascading down from the highest energy state to the ground level in vertically-stacked InAs quantum dots grown on an InP substrate, which is resonantly enhanced by LO phonons.
Keywords
III-V semiconductors; excitons; indium compounds; phonons; photoluminescence; wide band gap semiconductors; InAs; InP; carrier recombination dynamics; cascaded exciton relaxation; energy state; ground level; longitudinal optical phonons; time-resolved differential photoluminescence spectra; vertically-stacked quantum dots; Excitons; Indium phosphide; Laser mode locking; Phonons; Pulsed laser deposition; Quantum dots; Radiative recombination; Resonance; Substrates; Temperature; (160.6000) Semiconductor materials; (250.5230) Photoluminescence; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572742
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