DocumentCode
2265139
Title
GaAs under intense photoexcitation: Ultrafast carrier and phonon dynamics
Author
Basak, Amlan ; Hase, Muneaki ; Kitajima, Masahiro ; Petek, Hrvoje
Author_Institution
Dept. of Phys. & Astron., Univ. of Pittsburgh, Pittsburgh, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Ultrafast eletro-optic sampling is used to observe the response of n-doped GaAs with varying photoexcitation. Photocarrier density dependent coherent LO phonon-plasmon dynamics are observed. Time-resolved analysis reveals complex spectral evolution.
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; phonon-plasmon interactions; photoexcitation; GaAs; coherent LO phonon-plasmon dynamics; complex spectral evolution; intense photoexcitation; phonon dynamics; photocarrier density; time-resolved analysis; ultrafast carrier; ultrafast eletro-optic sampling; Anisotropic magnetoresistance; Gallium arsenide; Geometrical optics; Laser excitation; Optical pulses; Optical pumping; Optical scattering; Phonons; Probes; Ultrafast optics; (320.7130) Ultrafast processes in condensed matter, including semiconductors; 300.6240 Spectroscopy, coherent transient;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572743
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