Title :
A highly reliable aluminum interconnect etching process control for 0.13 μm flash technology
Author :
Yamamoto, Jun ; Hsieh, Ting-En ; Kondoh, T. ; Maki, Toni ; Tanimoto, Teruo ; Ogura, J. ; Muneta, T. ; Imaoka, Keiji
Author_Institution :
FASL Japan Ltd., Fukushima, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
This paper focuses on a novel Al etching profile control by resist hardening approach for DUV lithography to leave enough resist and control CD with high Al sidewall quality. Excessive resist hardening causes Al notching due to less sidewall passivation. The result shows a reasonable hardness of resist prevents Al notching and preserves enough resist with good CD control. Resist hardening (or hardness) is controlled by modifying bias power and CF4/Ar gas ratio.
Keywords :
aluminium; etching; hardening; hardness; integrated circuit interconnections; passivation; photoresists; titanium compounds; ultraviolet lithography; Al etching; Al notching; CF4/Ar gas ratio; DUV lithography; TiN-Al; bias power; flash technology; hardness; reliable aluminum interconnect; resist hardening; sidewall passivation; Aluminum; Artificial intelligence; Etching; Lithography; Passivation; Plasma applications; Process control; Resists; Space technology; Tin;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243266
