DocumentCode
2265302
Title
Influence of process chamber ambient on SiOC (k=2.9) ILD Cu damascene ashing
Author
Maruyama, Tetsuhiro ; Nishizawa, A. ; Tokashiki, K. ; Okamoto, Shusuke ; Igarashi, Yoichiro ; Honda, Masakazu
Author_Institution
Adv. Technol. Dev. Div., NEC Electron. Corp., Kanagawa, Japan
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
211
Lastpage
213
Abstract
Influence of dry etch/ash chamber ambient on inorganic low-k (SiOC k=2.9) Cu damascene interconnect is studied. To minimize erosion and damage of the SiOC ILD and the SiCN cap-layer, it is very important to characterize F atom density in process chamber.
Keywords
copper; dielectric materials; integrated circuit interconnections; silicon compounds; sputter etching; Cu; F atom density; SiOC; SiOC ILD Cu damascene ashing; dry etch/ash chamber; erosion; inorganic low-k Cu damascene interconnect; Ash; Capacitance; Degradation; Dry etching; Optical films; Plasma applications; Plasma chemistry; Plasma measurements; Pollution measurement; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243267
Filename
1243267
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