DocumentCode :
2265376
Title :
Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions
Author :
Costagliola, M. ; Rinaldi, N.
Author_Institution :
Dept. of Biomed., Electron. & Telecommun. Eng, Univ. of Naples Federico II, Naples, Italy
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
25
Lastpage :
28
Abstract :
A two-dimensional theoretical analysis of bipolar transistor operation under reversal base current conditions is presented. This model describes the current crowding effect occurring when the device is biased above the open-base breakdown voltage BVCEO, also known as the ldquopinch-inrdquo effect. In addition, the model clarifies, for the first time, the physical origin of instability phenomena occurring under common-base operating conditions. Closed form analytical relations are derived for the conditions which define the onset of instability under forced-VBE and forced-IE conditions. Finally, we present a simple analytical model for the base current- and geometry-dependence of the base resistance. This model is suitable for being incorporated into BJT compact models to properly describe device operation above BVCEO.
Keywords :
bipolar transistors; BJT compact model; BVCEO; bipolar junction transistors; bipolar transistor operation; current crowding effect; device operation; open-base breakdown voltage; reversal base current condition; Bipolar transistors; Current density; Germanium silicon alloys; Heterojunction bipolar transistors; Immune system; Impact ionization; Integrated circuit modeling; Proximity effect; Semiconductor optical amplifiers; Silicon germanium; SiGe HBT; base resistance; impact ionization; pinch-in effect; safe operating area;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
ISSN :
1088-9299
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2009.5314149
Filename :
5314149
Link To Document :
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