A two-channel, ultra-low-power, SiGe BiCMOS receiver front-end for X-band phased array radars

Author

Thrivikraman, Tushar K. ; Kuo, Wei-Min Lance ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

43

Lastpage

46

Abstract

We present an ultra-low-power SiGe BiCMOS receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase shifter, consumes only 4 mW of DC power while achieving over 10 dB of gain, less than 5 dB noise figure, and an OTOI of over 10 dBm. In addition, the RMS gain and phase errors were less than 0.5 dB and 2deg, respectively. This design demonstrates possible applications of SiGe HBT technology for use in ultra-low-power radar systems.

Keywords

BiCMOS integrated circuits; heterojunction bipolar transistors; low noise amplifiers; low-power electronics; microwave amplifiers; microwave phase shifters; microwave receivers; phased array radar; 3-bit phase shifter; DC power; HBT technology; LNA; OTOI; RMS gain; SiGe; X-band phased array radar system; noise figure; phase error; two-channel ultra-low-power SiGe BiCMOS receiver front-end; BiCMOS integrated circuits; Costs; Energy consumption; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Phase shifters; Phased arrays; Radar; Silicon germanium; LNA; Microwave receivers; Phased array radar; SiGe BiCMOS integrated circuits; phase-shifter;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314153

Filename

5314153