DocumentCode
2265587
Title
Mechanism of PFC reduction with gas circulation RIE system
Author
Hirayama, Yuzo ; Nagata, Yuichi
Author_Institution
HALCA Project, Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
269
Lastpage
272
Abstract
We study theoretical calculation and experimentally verify of gas reduction rate with using gas circulation RIE system. 40% reduction of PFC gases is expected as a result of trial calculation, and we successfully achieve significant reduction of PFC gases in dual damascene etching process. Consumption PFC gases are 40-80% reduction, and emission PFC gases are 70-80% reduction. We clarified that the variable factors of reduction rate is largely a result of usage gas kind.
Keywords
air pollution; global warming; industrial pollution; integrated circuit manufacture; organic compounds; semiconductor device manufacture; sputter etching; dual damascene etching; gas circulation RIE system; gas emission; gas reduction rate; perfluorocarbon gas consumption; perfluorocarbon reduction; theoretical calculation; trial calculation; Absorption; Dielectric films; Equations; Etching; Fluid flow; Gases; Global warming; Plasma applications; Plasma temperature; Production;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243280
Filename
1243280
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