Title :
Growth and characterization of GaAs/AlAs superlattices: evidence of quasi-indirect transition between minibands
Author :
Xiaodong Mu ; Ding, Yujie J. ; Khurgin, Jacob B. ; Xiaojun Wang
Author_Institution :
Dept. of Phys., Arkansas Univ., Fayetteville, AR, USA
Abstract :
Summary form only given. We have grown three structures of GaAs/AlAs superlattices and characterized them by using PL spectra. Our results show that for GaAs and AlAs layer thicknesses somewhere between 50 /spl Aring/ and 20 /spl Aring/ the superlattices start to behave as quasi-indirect semiconductor materials or type II superlattices. Our results presented here serve as a first step towards eventually using type-II superlattices in optical amplifiers with reduced cross talk and Q-switched lasers.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; photoluminescence; semiconductor optical amplifiers; semiconductor superlattices; 50 to 20 A; AlAs layer thickness; GaAs layer thickness; GaAs-AlAs; GaAs/AlAs superlattices; MOCVD; PL spectra; optical amplifiers; photoluminescence; quasi-indirect miniband transition; quasi-indirect semiconductor materials; type-II superlattices; Absorption; Delay effects; Density measurement; Gallium arsenide; Hot carriers; Laser transitions; Power measurement; Quantum well devices; Superlattices; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033867
