Growth and characterization of GaAs/AlAs superlattices: evidence of quasi-indirect transition between minibands

Author

Xiaodong Mu ; Ding, Yujie J. ; Khurgin, Jacob B. ; Xiaojun Wang

Author_Institution

Dept. of Phys., Arkansas Univ., Fayetteville, AR, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

227

Abstract

Summary form only given. We have grown three structures of GaAs/AlAs superlattices and characterized them by using PL spectra. Our results show that for GaAs and AlAs layer thicknesses somewhere between 50 /spl Aring/ and 20 /spl Aring/ the superlattices start to behave as quasi-indirect semiconductor materials or type II superlattices. Our results presented here serve as a first step towards eventually using type-II superlattices in optical amplifiers with reduced cross talk and Q-switched lasers.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; photoluminescence; semiconductor optical amplifiers; semiconductor superlattices; 50 to 20 A; AlAs layer thickness; GaAs layer thickness; GaAs-AlAs; GaAs/AlAs superlattices; MOCVD; PL spectra; optical amplifiers; photoluminescence; quasi-indirect miniband transition; quasi-indirect semiconductor materials; type-II superlattices; Absorption; Delay effects; Density measurement; Gallium arsenide; Hot carriers; Laser transitions; Power measurement; Quantum well devices; Superlattices; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033867

Filename

1033867