Title :
Elimination of CMP process in BEOL by using Low-k scan planarization
Author :
Mizuno, Takayuki ; Saito, Kazuyuki
Author_Institution :
Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
The improvement of global planarity after the Low-k film formation is indispensable for raise of the yield and reduction of the steps for planarization in dual damascene multilayer interconnection process. We confirmed that scan coating has more excellent uniformity and planarization ability than conventional spin coating.
Keywords :
chemical mechanical polishing; copper; integrated circuit manufacture; metallic thin films; planarisation; BEOL; CMP; Cu; dual damascene multilayer interconnection process; low-k film formation; low-k scan planarization; Area measurement; Coatings; Dielectric measurements; Equations; Fluid flow measurement; Planarization; Position measurement; Q measurement; Shape measurement; Thickness measurement;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243310
