Microdischarge devices on the 10 /spl sim/ 30 /spl mu/m scale: fabrication and applications

Author

Sung-Jin Park ; Chen, J. ; Chang Liu ; Eden, J.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

2002

fDate

24-24 May 2002

Abstract

Summary form only given. We have designed several device structures to obtain cavity dimensions down to 10 /spl mu/m. For the first set of devices, we microdrilled through a metal/polymer/metal thin-layered structure which has a total thickness of /spl sim/30 /spl mu/m. We also have designed and fabricated by MEMS techniques microdischarge devices that have cavity width in 10 /spl sim/ 50 /spl mu/m range. Inverted pyramidal cavities are formed on the Si wafer as a cathode electrode by wet etching.

Keywords

cathodes; glow discharges; microcavities; micromachining; micromechanical devices; 10 to 30 micron; 10 to 50 micron; MEMS techniques; Si; Si wafer; cathode electrode; cavity dimensions; cavity width; fabrication; glow discharges; inverted pyramidal cavities; metal/polymer/metal thin-layered structure; microdischarge devices; thickness; wet etching; Cathodes; Electrodes; Micromechanical devices; Optical devices; Optical polymers; Optical waveguides; Optimized production technology; Plasma devices; Waveguide lasers; Xenon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033912

Filename

1033912