DocumentCode
2266430
Title
168 GHz dynamic frequency divider in SiGe:C bipolar technology
Author
Knapp, Herbert ; Meister, Thomas F. ; Liebl, Wolfgang ; Aufinger, Klaus ; Schäfer, Herbert ; Böck, Josef ; Boguth, Sabine ; Lachner, Rudolf
Author_Institution
Infineon Technol., Neubiberg, Germany
fYear
2009
fDate
12-14 Oct. 2009
Firstpage
190
Lastpage
193
Abstract
This paper presents a dynamic frequency divider operating up to a maximum frequency of 168 GHz. The circuit is based on a first regenerative divider stage which is followed by a static divider and an output buffer. With a supply voltage of 4 V the circuit, including both divider stages and the output buffer, consumes 320 mW (105 mW in the regenerative divider) and operates up to a maximum frequency of 168 GHz. With a reduced supply voltage of 3.3 V a maximum operating frequency of 156 GHz is achieved at a power consumption of only 205 mW. The circuit is manufactured in a SiGe:C bipolar process with a cut-off frequency fT of 215 GHz.
Keywords
Ge-Si alloys; bipolar MIMIC; bipolar analogue integrated circuits; carbon; frequency dividers; SiGe:C; bipolar technology; dynamic frequency divider; frequency 156 GHz; frequency 168 GHz; frequency 215 GHz; power 105 mW; power 205 mW; power 320 mW; regenerative divider; static divider; voltage 3.3 V; voltage 4 V; Automotive engineering; Bandwidth; Circuits; Energy consumption; Frequency conversion; Millimeter wave radar; Mixers; Oscillators; Vehicle dynamics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location
Capri
ISSN
1088-9299
Print_ISBN
978-1-4244-4894-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2009.5314242
Filename
5314242
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