Effective particle removal on post polish cleaning by pH control of HF solution

Generally particle removal is one of the most important jobs on semiconductor manufacturing to enhance yield. Especially for wet chemical cleaning, it is needed to analyze mechanism and kinetics of wafer cleaning. For particle removal in chemical solutions, it is very important to control particle adhesion process from wafers. It´s strongly depends on van der Waals interaction and electro static potential between wafer surface and chemical solution molecules. In this point of view, chemical concentration control is one of the most important factor. In this paper, based on Zeta potential analysis, HF concentration of post polish cleaning has been examined for some type of wafer surface layers to remove particles effectively.