A 77GHz 3.3V 4-channel transceiver in SiGe BiCMOS technology

Author

Trotta, S. ; Dehlink, B. ; Ghazinour, A. ; Morgan, D. ; John, J.

Author_Institution

Freescale Semicond., Munich, Germany

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

186

Lastpage

189

Abstract

We present a 77 GHz four-channel transceiver for automotive radar applications designed in a 200 GHz f_T SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19 dB while the NFssb is lower than 13 dB at 100 kHz. The VCO is based on a new topology which allows generating differential push-push outputs. It shows a tuning range larger than 8 GHz. The phase noise is -74dBc/Hz at 100 kHz offset. The output power is 9 dBm. At a 3.3 V supply, the chip consumes 533 mA.

Keywords

BiCMOS integrated circuits; millimetre wave oscillators; phase noise; radar equipment; road vehicle radar; transceivers; voltage-controlled oscillators; wireless channels; 4-channel transceiver; I/Q configuration; NFssb; Rx-channel; SiGe; SiGe BiCMOS technology; Tx-channel; VCO; automotive radar; conversion gain; current 533 mA; differential push-push output; frequency 100 kHz; frequency 200 GHz; frequency 77 GHz; phase noise; topology; voltage 3.3 V; Automotive engineering; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Phase noise; Radar applications; Silicon germanium; Topology; Transceivers; Voltage-controlled oscillators; Multi-channel; SiGe; bipolar technology; low noise receiver; mm-wave VCO; transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314247

Filename

5314247