A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

Author

Chevalier, P. ; Pourchon, F. ; Lacave, T. ; Avenier, G. ; Campidelli, Y. ; Depoyan, L. ; Troillard, G. ; Buczko, M. ; Gloria, D. ; Céli, D. ; Gaquière, C. ; Chantre, A.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f_MAX. The technological optimization strategy is discussed and electrical characteristics are presented. A record peak f_MAX of 423 GHz (f_T = 273 GHz) is demonstrated in SiGe:C HBT technology.

Keywords

Ge-Si alloys; carbon; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; Si-SiGe:C; double-polysilicon FSA-SEG Si/SiGe:C HBT; electrical characteristics; frequency 400 GHz; technological optimization; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; BiCMOS; Heterojunction bipolar transistors; Millimeter wave transistors & measurements; Nanotechnology; Silicon Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314250

Filename

5314250