Title :
A SiGe BiCMOS burst-mode transimpedance amplifier using fast and accurate automatic offset compensation technique for 1G/10G dual-rate transceiver
Author :
Nishihara, S. ; Nakamura, M. ; Ito, T. ; Kurosaki, T. ; Ohtomo, Y. ; Okada, A.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper describes a 10G burst-mode transimpedance amplifier (TIA) featuring fast gain switching and accurate automatic offset compensation (AOC) with a feed-forward configuration. We successfully improved the AOC accuracy by expanding the linear operation region of the control circuit, which resulted in suppressed waveform distortion. We built an optical receiver using the developed TIA IC, which we fabricated with a 0.25-mum SiGe BiCMOS process. The main receiver specifications for burst-mode inputs at 10.3 Gbit/s include a sensitivity of -28.7 dBm, a dynamic range of over 23.7 dB and a response time of 230 ns.
Keywords :
BiCMOS analogue integrated circuits; feedforward amplifiers; optical receivers; silicon compounds; telecommunication switching; transceivers; SiGe; SiGe BiCMOS; automatic offset compensation technique; burst-mode transimpedance amplifier; control circuit; dual-rate transceiver; fast gain switching; optical receiver; suppressed waveform distortion; Automatic control; BiCMOS integrated circuits; Feedforward systems; Germanium silicon alloys; Optical amplifiers; Optical distortion; Optical receivers; Photonic integrated circuits; Silicon germanium; Transceivers; BiCMOS analog integrated circuits; Optical fiber communication; Optical subscriber loops;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314252
