DocumentCode
2266667
Title
Functional impact of particulate contamination from ion implantation on individual transistors
Author
Vanderpool, A. ; Whitson, B.
Author_Institution
Intel, Chandler, AZ, USA
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
505
Lastpage
508
Abstract
ULSI device construction is highly sensitive to particulate contamination. High current ion implantation is a significant source of particles, yet the kill rate of these particles is not well understood. This paper has found that particles 1μ or larger at implant kill die by blocking the implant with a 7% kill rate for particles added during ion implantation compared to a 15% kill rate for incoming particles. This suggests that the yield focus in implant should concentrate on particles larger than 1μ.
Keywords
MOSFET; ULSI; ion implantation; 1 micron; ULSI device; ion implantation; particulate contamination; transistors; Contamination; Implants; Ion implantation; Modems; Noise level; Particle measurements; Pollution measurement; Semiconductor device modeling; Testing; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243337
Filename
1243337
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