Growth temperature and composition effects in InGaAsN quantum wells for GaAs-based 1300 nm emitters

Summary form only given. We have examined the photoluminescence properties of InGaAsN quantum wells as a method of improving the performance of GaAs-based 1300 nm lasers. Among the parameters that significantly affect the quality of this material, growth temperature and In/N ratio of the alloy have particularly profound effects. Substantially lower growth temperatures than normally used for GaAs or InGaAs materials appear to enhance the quality of this alloy, while In fractions of 0.3-0.35 result in an acceptable compromise between quantum well strain and optical quality.