• DocumentCode
    2266915
  • Title

    Thermal effect on interconnect current density estimation

  • Author

    Zhao, Chaoyang ; Zhang, Xuliang ; Yao, Ming

  • Author_Institution
    Sch. of E.E., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2010
  • fDate
    28-30 July 2010
  • Firstpage
    862
  • Lastpage
    865
  • Abstract
    In this paper the methodology with thermal effect considered for predicting the maximum allowed current density Jmax in Copper (Cu) based interconnect is proposed. Based on the more accurate Jmax, an improvement on (jL) product-filtering algorithm for circuit level electromigration reliability analysis is discussed, which can guide us the reliability concern in the circuit design and layout process.
  • Keywords
    copper; electromigration; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; integrated circuit reliability; thermal management (packaging); Cu; circuit design; circuit layout; circuit level electromigration reliability analysis; interconnect current density estimation; maximum allowed current density; thermal effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems (ICCCAS), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-8224-5
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2010.5581855
  • Filename
    5581855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2266915