DocumentCode :
2266915
Title :
Thermal effect on interconnect current density estimation
Author :
Zhao, Chaoyang ; Zhang, Xuliang ; Yao, Ming
Author_Institution :
Sch. of E.E., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2010
fDate :
28-30 July 2010
Firstpage :
862
Lastpage :
865
Abstract :
In this paper the methodology with thermal effect considered for predicting the maximum allowed current density Jmax in Copper (Cu) based interconnect is proposed. Based on the more accurate Jmax, an improvement on (jL) product-filtering algorithm for circuit level electromigration reliability analysis is discussed, which can guide us the reliability concern in the circuit design and layout process.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; integrated circuit reliability; thermal management (packaging); Cu; circuit design; circuit layout; circuit level electromigration reliability analysis; interconnect current density estimation; maximum allowed current density; thermal effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems (ICCCAS), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-8224-5
Type :
conf
DOI :
10.1109/ICCCAS.2010.5581855
Filename :
5581855
Link To Document :
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