• DocumentCode
    2267088
  • Title

    A high-drive low-power BiCMOS buffer using compound PMOS/NPN transistors

  • Author

    Furth, Paul M. ; Andreou, Andreas G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
  • fYear
    1993
  • fDate
    16-18 Aug 1993
  • Firstpage
    1369
  • Abstract
    In this paper we present a high-drive low-power BiCMOS buffer amplifier implemented in a 2 μm technology. The class-AB output stage incorporates stacked NPN and compound PMOS/NPN transistors in which the PMOS transistors operate below threshold. Quiescent current is 300μA using a ±2.5V supply. Total area is 0.165 mm2
  • Keywords
    BiCMOS analogue integrated circuits; buffer circuits; differential amplifiers; -2.5 V; 2 micron; 2.5 V; 300 muA; BiCMOS buffer; buffer amplifier; class-AB output stage; compound PMOS/NPN transistors; high-drive low-power buffer; BiCMOS integrated circuits; CMOS technology; Capacitance; Fabrication; Frequency; High power amplifiers; MOSFETs; Signal processing; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
  • Conference_Location
    Detroit, MI
  • Print_ISBN
    0-7803-1760-2
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1993.343360
  • Filename
    343360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2267088