Boron implantation using plasma source ion implantation (PSII)

Author

Fetherston, P. ; Chapek, D. ; Shamim, M. ; Conrad, J.R.

Author_Institution

Dept. of Nucl. Eng., Wisconsin Univ., Madison, WI, USA

fYear

1995

fDate

5-8 June 1995

Firstpage

115

Abstract

Summary form only given, as follows. Boron implants with ion beam surface modification technology have been used with great success in materials applications. With plasma source ion implantation (PSII), the capability of processing large or complex geometries without sample manipulation could prove to be very useful. Boron trifluoride was used as the process gas. The sample substrates implanted were 6061 aluminum and tool steel. Processing and analysis (AES, Knoop, etc.) issues will be discussed.

Keywords

boron; ion implantation; plasma CVD coatings; plasma applications; plasma deposited coatings; surface alloying; 6061 Al; AES; Al; Auger electron spectroscopy; B; B implantation; B implants; BF/sub 3/; Knoop testing; ample manipulation; ion beam surface modification technology; plasma CVD; plasma source ion implantation; process gas; sample substrates; tool steel; Boron; Chromium; Coatings; Electrons; Ion implantation; Laboratories; Magnesium; Plasma properties; Plasma sources; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on

Conference_Location

Madison, WI, USA

ISSN

0730-9244

Print_ISBN

0-7803-2669-5

Type

conf

DOI

10.1109/PLASMA.1995.531470

Filename

531470