DocumentCode :
2267629
Title :
Boron implantation using plasma source ion implantation (PSII)
Author :
Fetherston, P. ; Chapek, D. ; Shamim, M. ; Conrad, J.R.
Author_Institution :
Dept. of Nucl. Eng., Wisconsin Univ., Madison, WI, USA
fYear :
1995
fDate :
5-8 June 1995
Firstpage :
115
Abstract :
Summary form only given, as follows. Boron implants with ion beam surface modification technology have been used with great success in materials applications. With plasma source ion implantation (PSII), the capability of processing large or complex geometries without sample manipulation could prove to be very useful. Boron trifluoride was used as the process gas. The sample substrates implanted were 6061 aluminum and tool steel. Processing and analysis (AES, Knoop, etc.) issues will be discussed.
Keywords :
boron; ion implantation; plasma CVD coatings; plasma applications; plasma deposited coatings; surface alloying; 6061 Al; AES; Al; Auger electron spectroscopy; B; B implantation; B implants; BF/sub 3/; Knoop testing; ample manipulation; ion beam surface modification technology; plasma CVD; plasma source ion implantation; process gas; sample substrates; tool steel; Boron; Chromium; Coatings; Electrons; Ion implantation; Laboratories; Magnesium; Plasma properties; Plasma sources; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location :
Madison, WI, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-2669-5
Type :
conf
DOI :
10.1109/PLASMA.1995.531470
Filename :
531470
Link To Document :
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