DocumentCode
2267765
Title
Quantum-confined Stark effect in intersubband transition in InAs/GaAs quantum dots
Author
Lu, Xuejun
Author_Institution
Univ. of Massachusetts Lowell, Lowell, MA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Quantum-confined Stark effect (QCSE) in intersubband transition in InAs/GaAs quantum dots (QD) is reported. The QCSE induced linear shift of the absorption spectrum was observed and analyzed to be in good agreement with theoretical predication.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum confined Stark effect; semiconductor quantum dots; InAs-GaAs; QCSE; intersubband transition; linear absorption spectrum shift; quantum-confined Stark effect; semiconductor quantum dot; Absorption; Electrooptic effects; Electrooptic modulators; Gallium arsenide; Nonlinear optics; Potential well; Quantum dots; Stark effect; Stationary state; Voltage;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572879
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