Title :
Quantum-confined Stark effect in intersubband transition in InAs/GaAs quantum dots
Author_Institution :
Univ. of Massachusetts Lowell, Lowell, MA
Abstract :
Quantum-confined Stark effect (QCSE) in intersubband transition in InAs/GaAs quantum dots (QD) is reported. The QCSE induced linear shift of the absorption spectrum was observed and analyzed to be in good agreement with theoretical predication.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum confined Stark effect; semiconductor quantum dots; InAs-GaAs; QCSE; intersubband transition; linear absorption spectrum shift; quantum-confined Stark effect; semiconductor quantum dot; Absorption; Electrooptic effects; Electrooptic modulators; Gallium arsenide; Nonlinear optics; Potential well; Quantum dots; Stark effect; Stationary state; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
