Experiments with the LLNL large-area ICP plasma source

Summary form only given, as follows. We have constructed a 30 diameter plasma source chamber to explore the problems associated with large-area inductively coupled plasma (ICP) sources with a view towards sources useful for 400 mm semiconductor wafer processing. Our initial source design experiments use a 25 diameter planar inductive coil driven at 13.56 MHz. Plasma data is taken in Ar and N/sub 2/ over the pressure range 3-50 mTorr with powers up to 2000 W. Diagnostics include Langmuir probes, B dot probes, and optical emission spectroscopy. Electrical circuit measurements are compared with results from commercial EM modeling codes. Initial indications are that uniform plasmas suitable for 400 mm wafer processing are attainable.