Direct determination of exciton homogeneous and inhomogeneous linewidths in semiconductor quantum wells with two-dimensional fourier transform spectroscopy

Author

Zhang, Tianhao ; Bristow, Alan D. ; Dai, Xingcan ; Kuznetsova, Irina ; Meier, Torsten ; Thomas, Peter ; Cundiff, Steven T.

Author_Institution

Nat. Inst. of Stand. & Technol., Univ. of Colorado, Boulder, CO

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Homogeneous and inhomogeneous broadening of heavy- and light-hole excitons in semiconductor quantum wells are measured along with the excitation dependence of both broadenings. Isolation of disorder-induced broadening is possible with spectra in different coherent pathways.

Keywords

Fourier transform spectra; III-V semiconductors; aluminium compounds; excitons; gallium arsenide; semiconductor quantum wells; spectral line broadening; GaAs-Al_0.3Ga_0.7As; coherent pathway; disorder; exciton homogeneous linewidths; exciton inhomogeneous linewidths; heavy-hole excitons; light-hole excitons; semiconductor quantum wells; spectral line broadening; two-dimensional Fourier transform spectroscopy; Excitons; Fourier transforms; Nonlinear optics; Optical distortion; Optical mixing; Resonance; Semiconductor materials; Semiconductor nanostructures; Spectroscopy; Temperature; (300.6240) Coherent transient spectroscopy; (300.6470) Semiconductors spectroscopy;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572898