Title :
Adaptive mesh generation in three dimensional device simulation
Author :
Tanaka, K. ; Kato, H. ; Ciampolini, P. ; Pierantoni, A. ; Baccarani, G.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
An automatic mesh optimization technique based on an a posteriori error evaluation is incorporated into the 3D device simulator HFIELDS-3D. The discretization error in electric field and current density is used for error indication. Although the calculation method to estimate these errors is simplified and modified to suit prismatic mesh elements, simulation results shows that the mesh can be optimized appropriately for different bias conditions by using unique upper limit values for error indicators
Keywords :
current density; digital simulation; electronic engineering computing; mesh generation; semiconductor device models; 3D device simulator; HFIELDS-3D; adaptive mesh generation; automatic mesh optimization technique; bias conditions; current density; discretization error; electric field; prismatic mesh elements; three dimensional device simulation; Automatic control; Current density; Degradation; Equations; Mesh generation; Microelectronics; National electric code; Optimization methods; Predictive models; Solid modeling;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-1867-6
DOI :
10.1109/NUPAD.1994.343466
